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The voltage of WSD20L100DN56 MOSFET is -20V, the current is -100A, the resistance is 3.5mΩ, the channel is P-Channel, and the package is DFN5X6-8L. It is engineered for high-density power systems requiring superior thermal performance and efficient switching.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | |||||
| WSD20L100DN56 | Single | P-Ch | -20 | 12 | -100 | - | - | - | - | 3.5 | 4.7 | 5 | 7.5 | - | - | 6100 | DFN5X6-8L |
The WSD20L100DN56 is a P-Channel MOSFET designed in a single configuration.
It features a maximum Drain-Source voltage rating of -20V and a continuous current capacity of -100A.
The typical RDS(ON) resistance is 3.5mΩ (with a maximum of 4.7mΩ) under @4.5V testing conditions, and 5mΩ (with a maximum of 7.5mΩ) under @2.5V.
This device is supplied in a compact, low-profile DFN5X6-8L package, which supports efficient heat dissipation.
Common applications include E-cigarettes, wireless chargers, drones, medical devices, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
