Free Sample WSD25280DN56G N-channel 25V 280A DFN5X6-8 WINSOK MOSFET Buy, In Stock

Part Number:WSD25280DN56G BVDSS:25V ID:280A RDSON:0.7mΩ   Channel:N-channel Package:DFN5X6-8

Product Description

Voltage
25V
Current
280A
Resistance
0.7mΩ
Channel
N-channel
Package
DFN5X6-8

The voltage of WSD25280DN56G MOSFET is 25V, the current is 280A, the resistance is 0.7mΩ, the channel is N-channel, and the package is DFN5X6-8.

Applications
High Frequency Point-of-Load Synchronous
Buck Converter
Networking DC-DC Power System
Power Tool Application
E-cigarettes MOSFET
Wireless charging MOSFET
Drones MOSFET
Medical care MOSFET
Car chargers MOSFET
Controllers MOSFET
Digital products MOSFET
Small household appliances MOSFET
Consumer electronics MOSFET
Equivalent / Cross Reference Models
Nxperian MOSFET PSMN1R-4ULD. POTENS Semiconductor MOSFET PDC262X.
Absolute Maximum Ratings
Symbol Parameter Rating Units
VDS Drain-Source Voltage 25 V
VGS Gate-Source Voltage ±20 V
ID @ TC=25℃ Continuous Drain Current (Silicon Limited)1,7 280 A
ID @ TC=70℃ Continuous Drain Current (Silicon Limited)1,7 190 A
IDM Pulsed Drain Current2 600 A
EAS Single Pulse Avalanche Energy3 1200 mJ
IAS Avalanche Current 100 A
PD @ TC=25℃ Total Power Dissipation4 83 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150
Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 25 --- --- V
△BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.022 --- V/℃
RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=20A --- 0.7 0.9
VGS=4.5V , ID=20A --- 1.4 1.9
VGS(th) Gate Threshold Voltage VGS=VDS , ID=250uA 1.0 --- 2.5 V
△VGS(th) VGS(th) Temperature Coefficient --- -6.1 --- mV/℃
IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=20V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=5V , ID=10A --- 40 --- S
Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 3.8 1.5 Ω
Qg Total Gate Charge (4.5V) VDS=15V , VGS=4.5V , ID=20A --- 72 --- nC
Qgs Gate-Source Charge --- 18 ---
Qgd Gate-Drain Charge --- 24 ---
Td(on) Turn-On Delay Time VDD=15V , VGEN=10V , RG=1Ω, ID=10A --- 33 --- ns
Tr Rise Time --- 55 ---
Td(off) Turn-Off Delay Time --- 62 ---
Tf Fall Time --- 22 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 7752 --- pF
Coss Output Capacitance --- 1120 ---
Crss Reverse Transfer Capacitance --- 650 ---
Frequently Asked Questions
What are the primary specifications of the WSD25280DN56G MOSFET?
The WSD25280DN56G features a drain-source voltage of 25V, a continuous current rating of 280A (Silicon Limited), an extremely low resistance of 0.7mΩ at VGS=10V, and uses an N-channel configuration in a DFN5X6-8 package.
What package does WSD25280DN56G use and what are its advantages?
It uses the DFN5X6-8 package. This package is ideal for high-density surface mount applications, offering excellent thermal performance, compact size, and low internal resistance.
What are typical applications for this N-channel MOSFET?
It is highly suitable for high-frequency point-of-load synchronous applications, buck converters, DC-DC power systems, power tools, wireless chargers, drones, medical equipment, and consumer electronics.
What is the static drain-source on-resistance (RDS(ON)) at different gate voltages?
Typically, the static RDS(ON) is 0.7mΩ with a gate-source voltage (VGS) of 10V, and 1.4mΩ with a VGS of 4.5V.
Are there cross-reference or equivalent parts for this device?
Yes, equivalent or cross-referenced models include Nxperian MOSFET PSMN1R-4ULD and POTENS Semiconductor MOSFET PDC262X.

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