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| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 30 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID @ TC=25℃ | Continuous Drain Current (Silicon Limited) 1,7 | 350 | A |
| ID @ TC=70℃ | Continuous Drain Current (Silicon Limited) 1,7 | 247 | A |
| IDM | Pulsed Drain Current 2 | 600 | A |
| EAS | Single Pulse Avalanche Energy 3 | 1800 | mJ |
| IAS | Avalanche Current | 100 | A |
| PD @ TC=25℃ | Total Power Dissipation 4 | 104 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance 2 | VGS=10V, ID=20A | --- | 0.48 | 0.62 | mΩ |
| VGS=4.5V, ID=20A | --- | 0.72 | 0.95 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.2 | 1.5 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=24V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=24V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=10A | --- | 40 | --- | S |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=15V, VGS=4.5V, ID=20A | --- | 89 | --- | nC |
| Qgs | Gate-Source Charge | --- | 37 | --- | ||
| Qgd | Gate-Drain Charge | --- | 20 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V, VGEN=10V, RG=1Ω, ID=10A | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 34 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 61 | --- | ||
| Tf | Fall Time | --- | 18 | --- | ||
| Ciss | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 7845 | --- | pF |
| Coss | Output Capacitance | --- | 4525 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 139 | --- |
The WSD30350DN56G is an N-channel MOSFET featuring a rated voltage of 30V, a continuous current of 350A (Silicon Limited at 25℃), a typical static resistance of 0.48mΩ (at VGS=10V), and comes in a DFN5X6-8 package.
This component is optimized for various electronic systems including e-cigarettes, wireless charging stations, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and general consumer electronics.
The gate threshold voltage ranges from a minimum of 1.2V to a maximum of 2.5V, with a typical value of 1.5V under standard testing conditions (VGS=VDS, ID=250uA).
The operating junction temperature (TJ) and storage temperature (TSTG) ranges safely from -55℃ up to 150℃.
Under test conditions of VDS=15V, VGS=0V, and f=1MHz, the typical Input Capacitance (Ciss) is 7845pF, Output Capacitance (Coss) is 4525pF, and Reverse Transfer Capacitance (Crss) is 139pF.
The typical total gate charge is 89nC under VDS=15V, VGS=4.5V, and ID=20A.
