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Free Sample WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET Factory, Distributors
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Free Sample WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET Factory, Distributors

Free Sample WSD4080DN56 N-channel 40V 85A DFN5X6-8 WINSOK MOSFET Factory, Distributors

Part Number：WSD4080DN56 BVDSS：40V ID：85A RDSON：4.5mΩ   Channel：N-channel Package：DFN5X6-8
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Product Description

Voltage
40V
Current
85A
Resistance
4.5mΩ
Channel / Package
N-Ch / DFN5X6-8
Target Applications
Small appliances MOSFET Handheld appliances MOSFET Motors MOSFET
Cross-Reference & Equivalents
  • AOS AON623
  • STMicroelectronics STL52DN4LF7AG / STL64DN4F7AG / STL64N4F7AG
  • PANJIT PJQ5442
  • POTENS Semiconductor PDC496X
Absolute Maximum Ratings (Ta = 25℃ unless otherwise noted)
Symbol Parameter Rating Units
VDS Drain-Source Voltage 40 V
VGS Gate-Source Voltage ±20 V
ID @ TC=25℃ Continuous Drain Current, VGS @ 10V 85 A
ID @ TC=100℃ Continuous Drain Current, VGS @ 10V 58 A
IDM Pulsed Drain Current 100 A
EAS Single Pulse Avalanche Energy 110.5 mJ
IAS Avalanche Current 47 A
PD @ TC=25℃ Total Power Dissipation 52.1 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃
RθJA Thermal Resistance Junction-Ambient 62 ℃/W
RθJC Thermal Resistance Junction-Case 2.4 ℃/W
Electrical Characteristics (Ta = 25℃ unless otherwise noted)
Symbol Parameter Conditions Min. Typ. Max. Unit
BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V
RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 4.5 6.5 mΩ
VGS=4.5V , ID=5A --- 6.4 8.5
VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 --- 2.5 V
IDSS Drain-Source Leakage Current VDS=32V , VGS=0V , TJ=25℃ --- --- 1 uA
VDS=32V , VGS=0V , TJ=55℃ --- --- 5
IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA
gfs Forward Transconductance VDS=10V , ID=5A --- 27 --- S
Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=10A --- 20 --- nC
Qgs Gate-Source Charge --- 5.8 ---
Qgd Gate-Drain Charge --- 9.5 ---
Td(on) Turn-On Delay Time VDD=15V , VGS=10V RG=3.3Ω ID=1A --- 15.2 --- ns
Tr Rise Time --- 8.8 ---
Td(off) Turn-Off Delay Time --- 74 ---
Tf Fall Time --- 7 ---
Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2354 --- pF
Coss Output Capacitance --- 215 ---
Crss Reverse Transfer Capacitance --- 175 ---
IS Continuous Source Current VG=VD=0V , Force Current --- --- 70 A
VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V
Frequently Asked Questions
QWhat is the primary rating of the WSD4080DN56 MOSFET?
The WSD4080DN56 is an N-channel MOSFET designed with a voltage rating of 40V, a continuous current rating of 85A, and a low static drain-source on-resistance (RDS(ON)) of 4.5mΩ.
QWhat type of package is used for this MOSFET?
This MOSFET comes in a compact and thermally efficient DFN5X6-8 package format.
QWhat are the typical applications of the WSD4080DN56?
It is widely implemented in small appliances, handheld power tools/appliances, and motor control modules.
QWhich models can serve as equivalent alternatives to this MOSFET?
Alternative cross-reference parts include AOS AON623, STMicroelectronics STL52DN4LF7AG / STL64DN4F7AG / STL64N4F7AG, PANJIT PJQ5442, and POTENS Semiconductor PDC496X.
QWhat are the limits of the operating junction temperature?
Both the operating junction temperature (TJ) and storage temperature (TSTG) ranges are specified from -55℃ to 150℃.
QWhat is the gate threshold voltage range?
The gate threshold voltage (VGS(th)) is specified between a minimum of 1.0V and a maximum of 2.5V when VGS equals VDS at ID=250uA.

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