Olukey
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| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Temperature Range | -55 to 150 | °C |
| IS | Diode Continuous Forward Current, TC=25°C | 80 | A |
| ID | Continuous Drain Current, VGS=10V, TC=25°C | 80 | A |
| ID | Continuous Drain Current, VGS=10V, TC=100°C | 66 | A |
| IDM | Pulsed Drain Current , TC=25°C | 300 | A |
| PD | Maximum Power Dissipation, TC=25°C | 150 | W |
| PD | Maximum Power Dissipation, TC=100°C | 75 | W |
| RθJA | Thermal Resistance-Junction to Ambient, t =10s | 50 | °C/W |
| RθJA | Thermal Resistance-Junction to Ambient, Steady State | 62.5 | °C/W |
| RqJC | Thermal Resistance-Junction to Case | 1 | °C/W |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=40A | --- | 7.0 | 9.0 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | VGS=VDS, ID=250uA | --- | -6.94 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=30V, VGS=10V, ID=40A | --- | 48 | --- | nC |
| Qgs | Gate-Source Charge | VDS=30V, VGS=10V, ID=40A | --- | 17 | --- | nC |
| Qgd | Gate-Drain Charge | VDS=30V, VGS=10V, ID=40A | --- | 12 | --- | nC |
| Td(on) | Turn-On Delay Time | VDD=30V, VGEN=10V, RG=1Ω, ID=1A, RL=15Ω | --- | 16 | --- | ns |
| Tr | Rise Time | VDD=30V, VGEN=10V, RG=1Ω, ID=1A, RL=15Ω | --- | 10 | --- | ns |
| Td(off) | Turn-Off Delay Time | VDD=30V, VGEN=10V, RG=1Ω, ID=1A, RL=15Ω | --- | 40 | --- | ns |
| Tf | Fall Time | VDD=30V, VGEN=10V, RG=1Ω, ID=1A, RL=15Ω | --- | 35 | --- | ns |
| Ciss | Input Capacitance | VDS=30V, VGS=0V, f=1MHz | --- | 2680 | --- | pF |
| Coss | Output Capacitance | VDS=30V, VGS=0V, f=1MHz | --- | 386 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=30V, VGS=0V, f=1MHz | --- | 160 | --- | pF |
