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The WSD80100DN56 is a high-performance N-channel MOSFET designed for efficient power management and switching applications. Featuring advanced technology in a compact package, it delivers optimal resistance and reliable thermal capabilities.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 80 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Temperature Range | -55 to 150 | °C |
| ID | Continuous Drain Current, VGS=10V, TC=25°C | 100 | A |
| Continuous Drain Current, VGS=10V, TC=100°C | 80 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 380 | A |
| PD | Maximum Power Dissipation, TC=25°C | 200 | W |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C/W |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 800 | mJ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 80 | --- | --- | V |
| ΔBVDSS/ΔTJ | BVDSS Temperature Coefficient | Reference to 25°C, ID=1mA | --- | 0.043 | --- | V/°C |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=40A | --- | 6.1 | 8.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| ΔVGS(th) | VGS(th) Temperature Coefficient | --- | -6.94 | --- | mV/°C | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25°C | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55°C | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=20A | 80 | --- | --- | S |
| Qg | Total Gate Charge (10V) | VDS=30V, VGS=10V, ID=30A | --- | 125 | --- | nC |
| Qgs | Gate-Source Charge | --- | 24 | --- | ||
| Qgd | Gate-Drain Charge | --- | 30 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V, VGS=10V, RG=2.5Ω, ID=2A, RL=15Ω | --- | 20 | --- | ns |
| Tr | Rise Time | --- | 19 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 70 | --- | ||
| Tf | Fall Time | --- | 30 | --- | ||
| Ciss | Input Capacitance | VDS=25V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Output Capacitance | --- | 410 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 315 | --- |
