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WSD86P10DN56 MOSFET is a high-performance power semiconductor designed for efficient power management and switching configurations.
| Part Number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON) (mΩ) | Ciss (pF) |
Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Typ. | |||||||
| WSD60P06DN56 | Single | P-Ch | -60 | 20 | -60 | 20 | 25 | - | - | 23 | 30 | - | - | - | - | 3300 | DFN5X6-8L |
The WSD86P10DN56 features a Drain-to-Source Voltage (VDS) of -60V, a Continuous Drain Current (ID) of -60A, and an On-State Resistance (RDS(ON)) of 20mΩ.
These MOSFETs feature a Single configuration, P-Channel design, and are packaged in the compact and thermally efficient DFN5X6-8L package outline.
It is widely used in electronic cigarettes, wireless chargers, electric motors, drones, medical equipment, vehicle chargers, device controllers, digital electronic items, small domestic appliances, and consumer electronics.
The typical input capacitance (Ciss) for the WSD60P06DN56 model is rated at 3300 pF, ensuring appropriate switching speeds and driver design compatibility.
At a gate voltage (VGS) of 10V, it has a maximum resistance of 20mΩ (typical 25mΩ). When operated at a lower gate voltage of 4.5V, the resistance measures at a maximum of 23mΩ (typical 30mΩ).
Yes, POTENS PDC6901X is identified as a corresponding cross-reference or alternative part matching similar structural and performance traits.
