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|
Part number |
Configuration |
Type |
VDS |
VGS |
ID (A) |
RDS(ON)(mΩ) |
RDS(ON)(mΩ) |
Ciss |
Package |
||||||||
@10V |
@6V |
@4.5V |
@2.5V |
@1.8V |
|||||||||||||
(V) |
±(V) |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
(pF) |
||||||
|
WSF22N06 |
Single |
N-Ch |
60 |
20 |
18 |
65 |
76 |
- |
- |
75 |
97 |
- |
- |
- |
- |
450 |
TO-252-2L |
Cross Reference / Related Model:
POTENS PDD6910
The WSF22N06 is an N-channel MOSFET with a drain-to-source voltage (VDS) of 60V, a continuous drain current (ID) of 18A, and a typical on-resistance (RDS(ON)) of 65mΩ.
The WSF22N06 MOSFET is packaged in a standard TO-252-2L package, which is ideal for surface mount applications requiring efficient thermal performance.
The gate-to-source voltage (VGS) for the WSF22N06 MOSFET is rated at ±20V.
It is widely used in electronic cigarettes, wireless chargers, electric motors, emergency power supplies, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
The input capacitance (Ciss) of the WSF22N06 MOSFET is 450 pF, ensuring suitable switching performance for high-frequency circuits.
Yes, POTENS PDD6910 is a related part that shares similar technical parameters and applications.
