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The voltage of WST2026 MOSFET is 650V, the current is 60A, the resistance is 150mΩ, the channel is N-Ch, and the package is TO-247-3L.
| Part number | Configuration | Type | VDS (V) | VGS ±(V) | ID (A) | RDS(ON)(mΩ) | Ciss (pF) | Package | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | ||||
| WSL60N65 | Single | N-Ch | 650 | 30 | 60 | 150 | 190 | - | - | - | - | - | - | - | - | 1510 | TO-247-3L |
This N-Channel MOSFET features a breakdown voltage rating of 650V, continuous drain current of 60A, and a typical on-resistance (RDS(on)) of 150mΩ.
The device is housed in a standard TO-247-3L package, which provides excellent thermal dissipation for high-power applications.
The MOSFET supports a maximum gate-source voltage (VGS) of ±30V, and features a typical input capacitance (Ciss) of 1510 pF.
Under a gate-source voltage of 10V, the typical RDS(ON) resistance is 150mΩ, with a maximum limit of 190mΩ.
It is suitable for a wide range of applications including E-cigarettes, wireless chargers, motors, Battery Management Systems (BMS), emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, digital products, small appliances, and consumer electronics.
