Olukey
1 / 1
Voltage
100V / -100V
High performance power control
Current
4.5A / -2.5A
Optimized for power efficiency
Resistance
110mΩ
Low RDS(ON) resistance
Channel & Package
N+P Channel
SOP-8L package type
| Part number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) Max. |
RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss (pF) |
Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| V | ±V | A | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | pF | ||||
| WSP85N10 | N+P | N-Ch | 100 | 20 | 4.5 | 100 | 110 | - | - | 110 | 150 | - | - | - | - | 445 | SOP-8L |
| P-Ch | -100 | 20 | 2.5 | 150 | 180 | - | - | 170 | 210 | - | - | - | - | 450 | |||
The WSP85N10 MOSFET features a voltage rating of 100V for the N-channel and -100V for the P-channel. The current capacity stands at 4.5A for the N-channel and -2.5A for the P-channel.
The WSP85N10 is designed as a dual N+P channel MOSFET configured in a single compact layout.
The typical RDS(ON) resistance is 110mΩ. Specifically, for the N-channel, it ranges from 100mΩ (typical) to 110mΩ (maximum) at 10V, and for the P-channel, it is 150mΩ (typical) at 10V.
The WSP85N10 MOSFET is packaged in a standard SOP-8L configuration, which makes it ideal for compact and surface-mount circuit board designs.
This MOSFET is widely applicable in e-cigarettes, wireless chargers, motors, drones, medical applications, car chargers, controllers, digital products, small household appliances, and various consumer electronics.
The typical input capacitance (Ciss) is 445pF for the N-channel and 450pF for the P-channel, providing stable switching performance.
