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The WSR10N65F is a high-performance N-channel power MOSFET designed for high efficiency and reliability. Featuring an advanced structure, it delivers optimized parameters suited for demanding electronic applications.
| Part Number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss (pF) |
Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Typ. | |||||
| WSR10N65F | Single | N-Ch | 650 | 30 | 10 | 600 | 800 | - | - | - | - | - | - | - | - | 1120 | TO-220F-3L |
The WSR10N65F is an N-channel MOSFET designed with a drain-source voltage (VDS) of 650V, a continuous drain current (ID) of 10A, and a low drain-source on-resistance (RDS(ON)) of 600mΩ.
The WSR10N65F MOSFET is encapsulated in a TO-220F-3L package, which offers good thermal dissipation properties and electrical isolation for high-voltage applications.
This N-channel MOSFET is highly suitable for power supplies, medical equipment, LED controllers, automotive electronics, outdoor equipment, and major household appliances.
Yes, suitable equivalent or replacement models include the AOS AOT10N65 and AOTF10N65.
The typical input capacitance (Ciss) of the WSR10N65F MOSFET is 1120 pF, which helps in calculating switching speed and driver requirements.
