Applications:
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSR180N10 | Single | N-Ch | 100 | 25 | 180 | 3 | 4 | - | - | - | - | - | - | - | - | 4120 | TO-220-3L |
The WSR180N10 is an N-channel MOSFET featuring a voltage rating of 100V, a continuous current of 180A, and a low typical resistance of 3mΩ.
The device is housed in a standard TO-220-3L package, providing reliable thermal dissipation and structural stability.
The typical input capacitance (Ciss) for the WSR180N10 is 4120 pF, which is essential for determining switching performance and driver requirements.
This MOSFET is commonly applied in power supplies, medical devices, large home appliances, and Battery Management Systems (BMS).
The WSR180N10 features a Single N-channel configuration, optimized for efficient high-side or low-side switching circuits.