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| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | |||||
| WSR22N50F | Single | N-Ch | 500 | 30 | 20 | 250 | 30 | - | - | - | - | - | - | - | - | 2800 | TO-220F-3L |
The WSR22N50F features a drain-source voltage (VDS) of 500V, a continuous drain current (ID) of 20A, and an on-state resistance (RDS(ON)) of 30mΩ (typical). It is optimized for high-efficiency power management systems.
The device is housed in a TO-220F-3L package. This fully isolated package option helps to simplify design isolation requirements and thermal management in high-density board layouts.
It is highly suitable for electronic cigarettes, wireless chargers, electric motors, BMS (Battery Management Systems), emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, and various small home appliances.
N-channel MOSFETs typically feature lower on-resistance and faster switching dynamics compared to P-channel counterparts, making them ideal for high-power switching applications where efficiency and thermal performance are critical.
Ciss represents the input capacitance of the MOSFET. A value of 2800pF indicates the charge capacity required to turn on the gate, which helps designers select the appropriate gate driver for optimal switching speeds and minimal losses.
