What are the key technical specifications of the WSR55N65F MOSFET?
The WSR55N65F is a single configuration, N-channel MOSFET featuring a drain-source voltage (VDS) of 650V, a continuous drain current (ID) of 55A, and a gate-source voltage (VGS) rating of ±30V.
What is the on-resistance (RDS(ON)) of this device?
The WSR55N65F has an on-resistance (RDS(ON)) of 150mΩ (typical value) and a maximum value of 190mΩ when tested at a gate voltage of 10V.
What package type does the WSR55N65F use?
This MOSFET is housed in a standard TO-220F-3L package, which offers excellent thermal dissipation and electrical isolation properties.
What is the input capacitance (Ciss) of the WSR55N65F?
The input capacitance (Ciss) of the WSR55N65F MOSFET is typically 1510 pF, ensuring fast switching efficiency.
In which applications can this MOSFET be used?
It is highly suitable for application in massage chairs, medical power supplies, 5G network devices, drones, various motor drivers, and automotive electronics.
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