ODM WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET Manufacturer, Purchase

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ODM WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET Manufacturer, Purchase

Part Number：WSD40200DN56G BVDSS：40V ID：180A RDSON：1.15mΩ Channel：N-channel Package：DFN5X6-8

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Product Description

WSD40120DN56G MOSFET

High-performance N-channel Power MOSFET designed for optimal efficiency and reliability.

Voltage

40V

Current

120A

Resistance

1.4mΩ

Channel Type

N-channel

Package

DFN5X6-8

Applications

E-cigarettes MOSFET

Wireless charging MOSFET

Drones MOSFET

Medical care MOSFET

Car chargers MOSFET

Controllers MOSFET

Digital products MOSFET

Small household appliances MOSFET

Consumer electronics MOSFET

Cross References & Equivalents

AOS

AOS MOSFET

AON6234, AON6232, AON623

STMicroelectronics MOSFET

STL14N4F7AG

POT

POTENS Semiconductor MOSFET

PDC496X

Absolute Maximum Ratings

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	40	V
VGS	Gate-Source Voltage	±20	V
I_D@T_C=25℃	Continuous Drain Current, V_GS @ 10V¹	120	A
I_D@T_C=100℃	Continuous Drain Current, V_GS @ 10V¹	82	A
IDM	Pulsed Drain Current²	400	A
EAS	Single Pulse Avalanche Energy³	400	mJ
IAS	Avalanche Current	40	A
P_D@T_C=25℃	Total Power Dissipation⁴	125	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Electrical Characteristics

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
BV_DSS	Drain-Source Breakdown Voltage	V_GS=0V , I_D=250uA	40	---	---	V
△BVDSS/△TJ	BV_DSS Temperature Coefficient	Reference to 25℃ , I_D=1mA	---	0.043	---	V/℃
RDS(ON)	Static Drain-Source On-Resistance²	VGS=10V , I_D=20A	---	1.4	1.8	mΩ
RDS(ON)	Static Drain-Source On-Resistance²	VGS=4.5V , I_D=20A	---	2.0	2.6	mΩ
VGS(th)	Gate Threshold Voltage	V_GS=V_DS , I_D =250uA	1.2	1.6	2.2	V
△V_GS(th)	V_GS(th) Temperature Coefficient	V_GS=V_DS , I_D =250uA	---	-6.94	---	mV/℃
IDSS	Drain-Source Leakage Current	V_DS=32V , V_GS=0V , T_J=25℃	---	---	1	uA
IDSS	Drain-Source Leakage Current	V_DS=32V , V_GS=0V , T_J=55℃	---	---	5	uA
IGSS	Gate-Source Leakage Current	V_GS=±20V , V_DS=0V	---	---	±100	nA
gfs	Forward Transconductance	V_DS=5V , I_D=20A	---	53	---	S
R_g	Gate Resistance	V_DS=0V , V_GS=0V , f=1MHz	---	1.0	---	Ω
Q_g	Total Gate Charge (10V)	V_DS=15V , V_GS=10V , I_D=20A	---	45	---	nC
Q_gs	Gate-Source Charge		---	12	---
Q_gd	Gate-Drain Charge		---	18.5	---
Td(on)	Turn-On Delay Time	V_DD=15V , V_GEN=10V , R_G=3.3 Ω, I_D=20A ,RL=15Ω.	---	18.5	---	ns
T_r	Rise Time		---	9	---
Td(off)	Turn-Off Delay Time		---	58.5	---
T_f	Fall Time		---	32	---
C_iss	Input Capacitance	V_DS=20V , V_GS=0V , f=1MHz	---	3972	---	pF
Coss	Output Capacitance		---	1119	---
C_rss	Reverse Transfer Capacitance		---	82	---

Frequently Asked Questions (FAQ)

What are the primary specifications of WSD40120DN56G MOSFET?

The WSD40120DN56G is an N-channel MOSFET featuring a voltage rating of 40V, a continuous current rating of 120A, and an ultra-low static on-resistance of 1.4mΩ. It comes housed in a space-saving DFN5X6-8 package.

What applications are best suited for this MOSFET?

Due to its high efficiency and thermal capabilities, it is ideal for e-cigarettes, wireless charging modules, drones, medical equipment, car chargers, motor controllers, digital products, small household appliances, and general consumer electronics.

What are the key equivalent parts for the WSD40120DN56G?

Equivalent industry cross-references include AOS models AON6234, AON6232, and AON623, as well as STMicroelectronics STL14N4F7AG and POTENS Semiconductor PDC496X.

What is the safe operating temperature range for this device?

The operating junction temperature (TJ) range and storage temperature (TSTG) range for the WSD40120DN56G are both rated from -55℃ to 150℃, ensuring reliable performance in harsh environments.

What is the power dissipation capability of this MOSFET?

The device can handle a total power dissipation of up to 125W at a case temperature (TC) of 25℃, providing stable operations under heavy loads.

How low is the typical gate resistance (Rg) and total gate charge (Qg)?

It features a typical gate resistance of 1.0Ω and a total gate charge (Qg) of 45nC under test conditions of VDS=15V, VGS=10V, and ID=20A.

Product Detail

ODM WSD40200DN56G N-channel 40V 180A DFN5X6-8 WINSOK MOSFET Manufacturer, Purchase

Product Description