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The WSD45N10GDN56 is a high-performance N-channel MOSFET designed for efficient power management and switching applications. With a robust voltage rating of 100V, a continuous current support of 45A, and a low typical drain-source on-resistance of 14.5mΩ, this device is packaged in a compact DFN5X6-8 form factor to ensure excellent thermal dissipation and space-saving integration.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 100 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V | 45 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V | 33 | A |
| ID@TA=25℃ | Continuous Drain Current, VGS @ 10V | 12 | A |
| ID@TA=70℃ | Continuous Drain Current, VGS @ 10V | 9.6 | A |
| IDM | Pulsed Drain Current | 130 | A |
| EAS | Single Pulse Avalanche Energy | 169 | mJ |
| IAS | Avalanche Current | 26 | A |
| PD@TC=25℃ | Total Power Dissipation | 95 | W |
| PD@TA=25℃ | Total Power Dissipation | 5.0 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.0 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=26A | --- | 14.5 | 17.5 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | VGS=VDS , ID=250uA | --- | -5 | --- | mV/℃ |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=25℃ | --- | - | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=80V , VGS=0V , TJ=55℃ | --- | - | 30 | uA |
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | - | ±100 | nA |
| Rge | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Total Gate Charge (10V) | VDS=50V , VGS=10V , ID=26A | --- | 42 | 59 | nC |
| Qgse | Gate-Source Charge | VDS=50V , VGS=10V , ID=26A | --- | 12 | -- | nC |
| Qgde | Gate-Drain Charge | VDS=50V , VGS=10V , ID=26A | --- | 12 | --- | nC |
| Td(on) | Turn-On Delay Time | VDD=30V , VGEN=10V , RG=6Ω, ID=1A , RL=30Ω | --- | 19 | 35 | ns |
| Tre | Rise Time | VDD=30V , VGEN=10V , RG=6Ω, ID=1A , RL=30Ω | --- | 9 | 17 | ns |
| Td(off) | Turn-Off Delay Time | VDD=30V , VGEN=10V , RG=6Ω, ID=1A , RL=30Ω | --- | 36 | 65 | ns |
| Tfe | Fall Time | VDD=30V , VGEN=10V , RG=6Ω, ID=1A , RL=30Ω | --- | 22 | 40 | ns |
| Cisse | Input Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 1800 | --- | pF |
| Cosse | Output Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 215 | --- | pF |
| Crsse | Reverse Transfer Capacitance | VDS=30V , VGS=0V , f=1MHz | --- | 42 | --- | pF |
