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The voltage of WSD75100DN56 MOSFET is 75V, the current is 100A, the resistance is 5.3mΩ, the channel is N-channel, and the package is DFN5X6-8.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 75 | V |
| VGS | Gate-Source Voltage | ±25 | V |
| TJ | Maximum Junction Temperature | 150 | °C |
| ID | Storage Temperature Range | -55 to 150 | °C |
| IS | Diode Continuous Forward Current, TC=25°C | 50 | A |
| ID | Continuous Drain Current, VGS=10V, TC=25°C | 100 | A |
| Continuous Drain Current, VGS=10V, TC=100°C | 73 | A | |
| IDM | Pulsed Drain Current, TC=25°C | 400 | A |
| PD | Maximum Power Dissipation, TC=25°C | 155 | W |
| Maximum Power Dissipation, TC=100°C | 62 | W | |
| RθJA | Thermal Resistance-Junction to Ambient, t =10s | 20 | °C |
| Thermal Resistance-Junction to Ambient, Steady State | 60 | °C | |
| RqJC | Thermal Resistance-Junction to Case | 0.8 | °C |
| IAS | Avalanche Current, Single pulse, L=0.5mH | 30 | A |
| EAS | Avalanche Energy, Single pulse, L=0.5mH | 225 | mJ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 75 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V, ID=25A | --- | 5.3 | 6.4 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 2.0 | 3.0 | 4.0 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 2 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=20A | --- | 50 | --- | S |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V, VGS=10V, ID=40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=30V, VGEN=10V, RG=1Ω, ID=1A, RL=15Ω | --- | 27 | 49 | ns |
| Tr | Rise Time | --- | 14 | 26 | ||
| Td(off) | Turn-Off Delay Time | --- | 60 | 108 | ||
| Tf | Fall Time | --- | 37 | 67 | ||
| Ciss | Input Capacitance | VDS=20V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Output Capacitance | 245 | 395 | 652 | ||
| Crss | Reverse Transfer Capacitance | 100 | 195 | 250 |
