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150V
40A
32mΩ
TO-252-2L
| Part Number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSF40N15 | Single | N-Ch | 150 | 25 | 40 | 32 | 40 | 40 | 60 | - | - | - | - | - | - | 2610 | TO-252-2L |
Cross Reference / Equivalent Model: PANJIT PJD18N20
The WSF40N15 MOSFET features a drain-source breakdown voltage (VDS) of 150V, continuous drain current (ID) of 40A, and a low typical static drain-source on-resistance (RDS(ON)) of 32mΩ at 10V gate drive.
This device is manufactured in a standard TO-252-2L (DPAK) surface mount package, which provides an optimal balance between compact sizing and excellent thermal dissipation.
The WSF40N15 is a Single N-channel enhancement mode power field-effect transistor.
It is widely used in automotive electronics, Power over Ethernet (POE) setups, LED lighting control, audio equipment, digital system power stages, consumer electronics, small home appliances, and lithium battery protection boards.
The PANJIT PJD18N20 MOSFET can be used as a cross-reference equivalent device depending on application designs and circuit configurations.
The WSF40N15 MOSFET has a typical input capacitance (Ciss) of 2610 pF, ensuring fast switching performance.
