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The voltage of WSP11N10T MOSFET is 100V, the current is 12A, the resistance is 70mΩ, the channel is Dual N-channel, and the package is SOP-8L.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSP11N10T | Dual | N-Ch | 100 | 20 | 12 | 70 | 95 | - | - | 80 | 115 | - | - | - | - | 1055 | SOP-8L |
The WSP11N10T features a Dual N-channel configuration, integrated within a single SOP-8L package.
This MOSFET supports a drain-to-source voltage (VDS) of 100V and a continuous drain current (ID) capacity of 12A.
The typical RDS(ON) of WSP11N10T is 70mΩ at a gate-source voltage (VGS) of 10V, providing highly efficient power transmission.
It is widely used in automotive electronics, POE (Power over Ethernet), LED lights, audio components, digital products, small appliances, consumer electronics, and protection boards.
The input capacitance (Ciss) for the WSP11N10T model is rated at 1055 pF.
The WSP11N10T MOSFET is packaged in a standard, surface-mount SOP-8L design, ideal for space-constrained layouts.
