The WSR170N04G is a high-performance N-channel MOSFET featuring a drain-source voltage of 40V, continuous current of 170A, and a low drain-source on-resistance of 1.9mΩ. Delivered in a robust TO-220-3L package, it is designed for efficiency and reliability in high-density power supply designs.
Applications
E-cigarette
Wireless Charger
Drone
Medical Devices
Car Charger
Controller
Digital Products
Small Appliances
Consumer Electronics
Technical Specifications
Part Number
Configuration
Type
VDS
VGS
ID (A)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Ciss
Package
@10V
@6V
@4.5V
@2.5V
@1.8V
(V)
±(V)
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
(pF)
WSR170N04G
Single
N-Ch
40
20
170
1.9
3
-
-
-
-
-
-
-
-
3950
TO-220-3L
Compatible Equivalents / Cross Reference: ST STP180N4F6, STP410N4F7AG, and POTENS PDP4970.
Frequently Asked Questions
What is the voltage rating of the WSR170N04G MOSFET?
The WSR170N04G MOSFET has a maximum drain-source voltage (VDS) rating of 40V.
What package type does the WSR170N04G use?
It is packaged in a standard, high-reliability TO-220-3L package, which provides excellent thermal dissipation characteristics.
What is the typical drain-source on-resistance (RDS(ON))?
The typical RDS(ON) resistance is 1.9mΩ at a gate-source voltage (VGS) of 10V, offering highly efficient operation.
What products typically incorporate this MOSFET?
It is widely applied in consumer electronics, wireless chargers, controllers, drones, medical appliances, car chargers, and e-cigarettes.
Which industry equivalent models can replace the WSR170N04G?
Compatible cross-references include ST STP180N4F6, ST STP410N4F7AG, and POTENS PDP4970.
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