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The voltage of WSR180N08 MOSFET is 80V, the current is 180A, the resistance is 3.2mΩ, the channel is N-channel, and the package is TO-220-3L.
| Part Number | Configuration | Type | Ratings | RDS(ON) (mΩ) | Ciss (pF) | Package | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VDS (V) | VGS (±V) | ID (A) | @ 10V | @ 6V | @ 4.5V | @ 2.5V | @ 1.8V | ||||||||||
| Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | ||||||||
| WSR180N08 | Single | N-Ch | 85 | 20 | 180 | 3.2 | 4 | - | - | - | - | - | - | - | - | 6750 | TO-220-3L |
The WSR180N08 is an N-channel power MOSFET designed with a voltage rating of 80V (VDS rating of 85V), a continuous current of 180A, and a low typical static drain-source on-resistance (RDS(ON)) of 3.2mΩ.
This device is packaged in a standard TO-220-3L design, which allows for robust thermal management, heat-sink mounting, and reliable through-hole assembly.
It is highly suitable for electronic cigarettes, wireless chargers, electric motor drivers, Battery Management Systems (BMS), emergency power supplies, drones, medical hardware, car chargers, controllers, 3D printers, small home appliances, and various consumer electronic modules.
At a gate-source voltage (VGS) of 10V, the device achieves a typical on-resistance of 3.2mΩ and does not exceed a maximum limit of 4mΩ, ensuring minimum power loss and high efficiency.
The input capacitance (Ciss) for the WSR180N08 is rated at 6750 pF, which facilitates faster switching transitions when matched with a correct gate drive circuit.
Yes, POTENS PDP8970 is listed as a related reference device for cross-referencing and evaluating similar operational capabilities.
