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| Part Number | Configuration | Type | VDS (V) | VGS (±V) | ID (A) | RDS(ON) Typ. @10V (mΩ) | RDS(ON) Max. @10V (mΩ) | Ciss (pF) | Package |
|---|---|---|---|---|---|---|---|---|---|
| WSR20N65F | Single | N-Ch | 650 | 30 | 20 | 400 | 480 | 5150 | TO-220-3L |
The WSR20N65F is an N-channel MOSFET designed with a drain-source voltage (VDS) of 650V, a continuous drain current (ID) of 20A, and a typical static drain-source on-resistance (RDS(ON)) of 400mΩ.
This MOSFET comes in a standard TO-220-3L package, which offers excellent thermal dissipation characteristics and is ideal for various through-hole mounting designs.
The WSR20N65F is highly suitable for application in massage chairs, medical power supplies, 5G communications infrastructure, drones, electric motors, and automotive electronics.
The WSR20N65F serves as a functional equivalent or cross-reference alternative to parts like AOS AOT25S65, AOTF18N65, and AOTF25S65.
The WSR20N65F features a typical input capacitance (Ciss) of 5150 pF, which helps in calculating gate charge requirements and switching speeds during driver design.
