Frequently Asked Questions
What are the main electrical parameters of the WSD30160DN56 FET?
The WSD30160DN56 FET features a BVDSS voltage rating of 30V, a continuous current capability of 120A, and an ultra-low resistance of 1.9mΩ.
Which channel type and package does the WSD30160DN56 use?
This semiconductor device is designed as an N-channel MOSFET and is housed in a standard DFN5X6-8 package format.
What AOS MOSFET models are compatible with this device?
The WSD30160DN56 is related to and can serve as an alternative or equivalent to the AOS models AON6382, AON6384, AON644A, and AON6548.
What applications are best suited for the WSD30160DN56?
It is highly suitable for use in e-cigarettes, wireless charging stations, drones, medical care equipment, car chargers, controller boards, digital products, small household appliances, and various consumer electronics.
Why is the 1.9mΩ resistance of this N-channel MOSFET beneficial?
A low resistance of 1.9mΩ helps minimize power dissipation and conduction losses, making it highly efficient for high-current applications up to 120A.
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