AOS MOSFET: AON6264C, AON6264E, AON6266E, AONS6662
STMicroelectronics MOSFET: STL13N6F7, STL14N6F7
PANJIT MOSFET: PSMQC33N6NS1
POTENS Semiconductor MOSFET: PDC692X
Frequently Asked Questions
What are the primary electrical specifications of the WSD100N06GDN56 MOSFET?
The WSD100N06GDN56 is an N-channel MOSFET featuring a drain-source breakdown voltage (VDS) of 60V, a continuous drain current (ID) of 100A, and an typical drain-source on-state resistance (RDS(on)) of 3mΩ at VGS=10V.
Which package type is the WSD100N06GDN56 MOSFET supplied in?
This device is supplied in the DFN5X6-8 package, which is ideal for high-density power layouts requiring low thermal resistance and space-saving integration.
What applications are best suited for this MOSFET?
The WSD100N06GDN56 is highly optimized for power switching applications including medical power supplies, PDs (Power Delivery), drones, electronic cigarettes, major appliances, and power tools.
Which alternative MOSFET models can cross-reference with WSD100N06GDN56?
Equivalent cross-reference options include AOS (AON6264C, AON6264E, AON6266E, AONS6662), STMicroelectronics (STL13N6F7, STL14N6F7), PANJIT (PSMQC33N6NS1), and POTENS Semiconductor (PDC692X).
What is the gate threshold voltage range (VGS(TH)) for this device?
The gate threshold voltage (VGS(TH)) of the WSD100N06GDN56 MOSFET ranges from a minimum of 1.2V to a maximum of 2.5V, with a typical value of 1.8V under test conditions of VGS = VDS and IDS = 250µA.
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