Olukey
1 / 1
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSD1614DN106 | Single | N-Ch | 20 | 8 | 1.4 | - | - | - | - | - | 230 | - | 305 | - | 455 | 43 | DFN1X06-6S |
The WST2026 is an N-channel MOSFET designed with a drain-to-source voltage (VDS) of 20V, a continuous drain current (ID) of 1.4A, and a typical drain-source on-state resistance (RDS(ON)) of 230mΩ.
This MOSFET is highly suitable for compact and low-power applications including cell phones, tablets, consumer electronics, bank handheld devices, and various small household appliances.
The device features a DFN1X06-6S package. This ultra-small, leadless surface-mount package is ideal for space-constrained designs, providing excellent thermal performance and layout efficiency.
According to technical specifications, the typical RDS(ON) is 230mΩ at 4.5V VGS, 305mΩ at 2.5V VGS, and rises to 455mΩ when operating at a lower VGS of 1.8V.
Yes, this component can be cross-referenced or replaced by equivalent products such as AOS AON1606 and PANJIT PJQ4416EP depending on the specific design requirements.
