The WSD220N06DN56 is a high-performance N-Channel MOSFET designed with a voltage of 60V, a current capacity of 220A, and an ultra-low resistance of 1mΩ. Housed in a compact DFN5X6-8L package, this power component offers exceptional efficiency and reliability for demanding applications.
Target Applications
Medical Power Supplies
PD (Power Delivery)
Drones
Electronic Cigarettes
Major Appliances
Power Tools
Technical Specifications
Part Number
Configuration
Type
VDS (V)
VGS ±(V)
ID (A)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Ciss (pF)
Package
@10V
@6V
@4.5V
@2.5V
@1.8V
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
WSD220N06DN56
Single
N-Ch
60
20
220
1
1.3
-
-
-
-
-
-
-
-
5990
DFN5X6-8L
Frequently Asked Questions
What are the key technical specifications of the WSD220N06DN56?
The WSD220N06DN56 is an N-Channel MOSFET with a drain-source breakdown voltage (VDS) of 60V, a continuous drain current (ID) of 220A, and an exceptionally low drain-source on-state resistance (RDS(ON)) of 1mΩ at 10V.
What package type is used for the WSD220N06DN56?
It is housed in a DFN5X6-8L package, which offers superior thermal management, low parasitic inductance, and space efficiency on printed circuit boards.
What are the typical applications for this MOSFET?
Common applications include Medical Power Supplies, Power Delivery (PD) systems, Drones, Electronic Cigarettes, Major Appliances, and high-efficiency Power Tools.
Why is the 1mΩ RDS(ON) resistance advantageous?
An ultra-low resistance of 1mΩ reduces conduction losses in power circuits, translates to lower heat generation, and improves the overall energy efficiency of the system.
What is the input capacitance (Ciss) rating?
The WSD220N06DN56 MOSFET has an input capacitance (Ciss) of 5990 pF, which helps determine gate charge requirements and optimal gate drive design.