Olukey
1 / 1
The voltage of WSD6060DN56 MOSFET is 60V, the current is 65A, the resistance is 7.5mΩ, the channel is N-channel, and the package is DFN5X6-8.
| Symbol | Parameter | Conditions / Rating | Rating | Unit |
|---|---|---|---|---|
| Common Ratings | ||||
| VDSS | Drain-Source Voltage | — | 60 | V |
| VGSS | Gate-Source Voltage | — | ±20 | V |
| TJ | Maximum Junction Temperature | — | 150 | °C |
| TSTG | Storage Temperature Range | — | -55 to 150 | °C |
| IS | Diode Continuous Forward Current | TC = 25°C | 30 | A |
| ID | Continuous Drain Current | TC = 25°C | 65 | A |
| TC = 70°C | 42 | |||
| IDM | Pulse Drain Current Tested | TC = 25°C | 250 | A |
| PD | Maximum Power Dissipation | TC = 25°C | 62.5 | W |
| TC = 70°C | 38 | |||
| RθJL | Thermal Resistance-Junction to Lead | Steady State | 2.1 | °C/W |
| RθJA | Thermal Resistance-Junction to Ambient | t ≤ 10s | 45 | °C/W |
| Steady State | 50 | |||
| IAS | Avalanche Current, Single pulse | L = 0.5mH | 18 | A |
| EAS | Avalanche Energy, Single pulse | L = 0.5mH | 81 | mJ |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, IDS = 250μA | 60 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 48V, VGS = 0V | - | - | 1 | μA |
| VDS = 48V, VGS = 0V, TJ = 85°C | - | - | 30 | |||
| VGS(th) | Gate Threshold Voltage | VDS = VGS, IDS = 250μA | 1.2 | 1.5 | 2.5 | V |
| IGSS | Gate Leakage Current | VGS = ±20V, VDS = 0V | - | - | ±100 | nA |
| RDS(ON) | Drain-Source On-state Resistance | VGS = 10V, IDS = 20A | - | 7.5 | 10 | mΩ |
| VGS = 4.5V, IDS = 15A | - | 10 | 15 | |||
| Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | ISD = 1A, VGS = 0V | - | 0.75 | 1.2 | V |
| trr | Reverse Recovery Time | ISD = 20A, dISD/dt = 100A/μs | - | 42 | - | ns |
| Qrr | Reverse Recovery Charge | - | 36 | - | nC | |
| Dynamic Characteristics | ||||||
| RG | Gate Resistance | VGS = 0V, VDS = 0V, F = 1MHz | - | 1.5 | - | Ω |
| Ciss | Input Capacitance | VGS = 0V, VDS = 30V, F = 1.0MHz | - | 1340 | - | pF |
| Coss | Output Capacitance | - | 270 | - | ||
| Crss | Reverse Transfer Capacitance | - | 40 | - | ||
| td(ON) | Turn-on Delay Time | VDD = 30V, IDS = 1A, VGEN = 10V, RG = 6Ω | - | 15 | - | ns |
| tr | Turn-on Rise Time | - | 6 | - | ||
| td(OFF) | Turn-off Delay Time | - | 33 | - | ||
| tf | Turn-off Fall Time | - | 30 | - | ||
| Gate Charge Characteristics | ||||||
| Qg | Total Gate Charge | VDS = 30V, VGS = 4.5V, IDS = 20A | - | 13 | - | nC |
| Qg | Total Gate Charge | VDS = 30V, VGS = 10V, IDS = 20A | - | 27 | - | |
| Qgth | Threshold Gate Charge | - | 4.1 | - | ||
| Qgs | Gate-Source Charge | - | 5 | - | ||
| Qgd | Gate-Drain Charge | - | 4.2 | - | ||
The WSD6060DN56 is an N-channel MOSFET designed with a Drain-Source voltage of 60V, a continuous current capacity of 65A, and a typical on-state resistance of 7.5mΩ.
This MOSFET comes in a DFN5X6-8 package, which offers excellent thermal performance and compact footprint sizes ideal for high-density layouts.
It is widely used in power management applications including e-cigarettes, wireless chargers, motor controllers, drones, medical equipment, car chargers, and digital consumer electronics.
Equivalent cross-reference parts include STMicroelectronics STL5DN6F7, PANJIT PSMQC73N6NS1, and POTENS Semiconductor PDC696X.
The gate threshold voltage ranges from 1.2V to 2.5V (typical 1.5V). The typical RDS(on) is 7.5mΩ at VGS=10V and 10mΩ at VGS=4.5V.
The maximum junction operating temperature (TJ) is 150°C, and the storage temperature (TSTG) ranges safely from -55°C to 150°C.
