OEM WSD65N12GDN56 N-Channel 120V 72A DFN5X6-8L WINSOK MOSFET Suppliers, Factory

Part Number:WSD65N12GDN56 BVDSS:120V ID:72A RDSON:10mΩ   Channel:N-Channel Package:DFN5X6-8L

Product Description

Product Overview

The WSD65N12GDN56 is a high-performance N-Channel MOSFET designed for efficient power management and switching applications. Featuring a robust design with a 120V voltage rating, 72A current capacity, and a low resistance of 10mΩ, it delivers outstanding reliability and thermal performance in a compact DFN5X6-8L package.

Voltage (Vds)
120V
Current (Id)
72A
Resistance (Rds(on))
10mΩ
Channel Type
N-Channel
Package
DFN5X6-8L
Applications
Medical devices Drones PD power supply LED power supply Industrial equipment
Technical Parameter Table
Part Number Configuration Type VDS
(V)
VGS
±(V)
ID
(A)
RDS(ON) (mΩ) RDS(ON) (mΩ) Ciss
(pF)
Package
@10V @6V @4.5V @2.5V @1.8V
Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ.
WSD65N12GDN56 Single N-Ch 120 20 72 10 12 - - 15 23 - - - - 2640 DFN5X6-8L
Frequently Asked Questions (FAQ)
Q1: What are the main electrical characteristics of the WSD65N12GDN56 MOSFET?
A1: The WSD65N12GDN56 features a breakdown voltage (VDS) of 120V, a continuous drain current (ID) capacity of 72A, and an exceptionally low on-resistance (RDS(ON)) of 10mΩ (typical at 10V VGS).
Q2: What type of package does the WSD65N12GDN56 use?
A2: This MOSFET is housed in a standard DFN5X6-8L package, which offers low thermal resistance and a compact footprint suitable for high-density design layouts.
Q3: Which applications benefit most from using this MOSFET?
A3: It is highly suitable for medical devices, unmanned aerial vehicles (drones), USB PD (Power Delivery) power supplies, LED driver systems, and various industrial equipment power modules.
Q4: What is the typical input capacitance (Ciss) of the WSD65N12GDN56?
A4: The typical input capacitance (Ciss) is 2640 pF, which supports efficient high-frequency switching operations.
Q5: How does the RDS(ON) resistance behave at different VGS gate voltages?
A5: Under a VGS of 10V, the RDS(ON) has a typical value of 10mΩ and a maximum of 12mΩ. When operating at a lower gate drive voltage of 4.5V, the RDS(ON) measures a typical value of 15mΩ and a maximum of 23mΩ.
Q6: Is this MOSFET an N-Channel or P-Channel device?
A6: The WSD65N12GDN56 is a Single configuration N-Channel MOSFET, optimized for low-side switching applications and high efficiency.

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