Channel Type: N-channel
Applications
Medical voltage MOSFET
Photographic equipment MOSFET
Drones MOSFET
Industrial control MOSFET
5G MOSFET
Automotive electronics MOSFET
Alternative Equivalent Models
AOS MOSFET AON6276, AONS62814T. STMicroelectronics MOSFET STL13N8F7, STL135N8F7AG.
Absolute Maximum Ratings
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
85 |
V |
| VGS |
Gate-Source Voltage |
±25 |
V |
| ID@TC=25℃ |
Continuous Drain Current, VGS @ 10V |
120 |
A |
| ID@TC=100℃ |
Continuous Drain Current, VGS @ 10V |
96 |
A |
| IDM |
Pulsed Drain Current (TC=25°C) |
384 |
A |
| EAS |
Avalanche Energy, Single pulse, L=0.5mH |
320 |
mJ |
| IAS |
Avalanche Current, Single pulse, L=0.5mH |
180 |
A |
| PD@TC=25℃ |
Total Power Dissipation |
104 |
W |
| PD@TC=100℃ |
Total Power Dissipation |
53 |
W |
| TSTG |
Storage Temperature Range |
-55 to 175 |
℃ |
| TJ |
Operating Junction Temperature Range |
175 |
℃ |
Electrical Characteristics
| Symbol |
Parameter |
Conditions |
Min. |
Typ. |
Max. |
Unit |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V , ID=250uA |
85 |
--- |
--- |
V |
| △BVDSS/△TJ |
BVDSS Temperature Coefficient |
Reference to 25℃ , ID=1mA |
--- |
0.096 |
--- |
V/℃ |
| RDS(ON) |
Static Drain-Source On-Resistance |
VGS=10V, ID=50A |
--- |
3.7 |
4.8 |
mΩ |
| VGS(th) |
Gate Threshold Voltage |
VGS=VDS , ID=250uA |
2.0 |
3.0 |
4.0 |
V |
| △VGS(th) |
VGS(th) Temperature Coefficient |
VGS=VDS , ID=250uA |
--- |
-5.5 |
--- |
mV/℃ |
| IDSS |
Drain-Source Leakage Current |
VDS=85V , VGS=0V , TJ=25℃ |
--- |
--- |
1 |
uA |
| VDS=85V , VGS=0V , TJ=55℃ |
--- |
--- |
10 |
| IGSS |
Gate-Source Leakage Current |
VGS=±25V , VDS=0V |
--- |
--- |
±100 |
nA |
| Rg |
Gate Resistance |
VDS=0V , VGS=0V , f=1MHz |
--- |
3.2 |
--- |
Ω |
| Qg |
Total Gate Charge (10V) |
VDS=50V , VGS=10V , ID=10A |
--- |
54 |
--- |
nC |
| Qgs |
Gate-Source Charge |
--- |
17 |
--- |
| Qgd |
Gate-Drain Charge |
--- |
11 |
--- |
| Td(on) |
Turn-On Delay Time |
VDD=50V , VGS=10V , RG=1Ω, RL=1Ω, IDS=10A |
--- |
21 |
--- |
ns |
| Tr |
Rise Time |
--- |
18 |
--- |
| Td(off) |
Turn-Off Delay Time |
--- |
36 |
--- |
| Tf |
Fall Time |
--- |
10 |
--- |
| Ciss |
Input Capacitance |
VDS=40V , VGS=0V , f=1MHz |
--- |
3750 |
--- |
pF |
| Coss |
Output Capacitance |
--- |
395 |
--- |
| Crss |
Reverse Transfer Capacitance |
--- |
180 |
--- |
Frequently Asked Questions (FAQ)
What are the primary specifications of the WSD80120DN56 MOSFET?
The WSD80120DN56 is an N-channel MOSFET designed with an 85V voltage rating, 120A continuous drain current, and a low static drain-source on-resistance (RDS(ON)) of 3.7mΩ.
What package type does the WSD80120DN56 use?
This MOSFET is housed in a DFN5X6-8 package, which offers excellent thermal dissipation and a compact footprint suitable for high-density layouts.
In which applications can the WSD80120DN56 MOSFET be used?
It is highly suited for medical voltage setups, photographic equipment, drones, industrial control systems, 5G hardware, and automotive electronics.
What are some equivalent alternative MOSFET models?
Equivalent models include AOS MOSFETs AON6276 and AONS62814T, as well as STMicroelectronics MOSFETs STL13N8F7 and STL135N8F7AG.
What is the operating junction temperature range of this device?
The WSD80120DN56 features a maximum operating junction temperature rating of 175°C, ensuring reliable performance in demanding thermal environments.
Olukey
