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| Part Number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSF07N10 | Single | N-Ch | 100 | 20 | 7 | 195 | 250 | - | - | - | - | - | - | - | - | 320 | TO-252-2L |
| WSF12N10 | Single | N-Ch | 100 | 20 | 12 | 175 | 220 | - | - | 220 | 310 | - | - | - | - | 890 | TO-252-2L |
| WSF12N10G | Single | N-Ch | 100 | 20 | 12 | 105 | 125 | - | - | 115 | 145 | - | - | - | - | 206.1 | TO-252-2L |
These N-channel MOSFETs feature a voltage of 60V, a current rating of 12A, a minimum resistance of 105mΩ, and are housed in a TO-252-2L package.
They are ideal for electronic cigarettes, wireless chargers, motors, emergency power systems, drones, medical equipment, car chargers, controllers, digital products, small appliances, and general consumer electronics.
For the WSF12N10, the RDS(ON) is 175mΩ (typical) / 220mΩ (maximum) at 10V. The WSF12N10G offers a lower resistance of 105mΩ (typical) / 125mΩ (maximum) at 10V, providing better efficiency.
All three models (WSF07N10, WSF12N10, and WSF12N10G) feature a Single N-channel configuration and are manufactured in a TO-252-2L package.
Yes, equivalent parts include AOS AOD2922, VISHAY SiHFU120, TOSHIBA TK7S10N1Z, PANJIT PJD13N10A, Sinopower SM1A56NHU, NIKO PA910BD, and POTENS PDD0910.
The input capacitance (Ciss) values are 320 pF for the WSF07N10, 890 pF for the WSF12N10, and 206.1 pF for the WSF12N10G.
