The WSK200N08 is a high-performance N-channel MOSFET designed to meet rigorous electrical efficiency and power density requirements across various electronic systems.
Voltage80V
Current200A
Resistance2.9mΩ
ChannelN-Channel
PackageTO-263-2L
Applications
E-cigaretteWireless chargerMotorEmergency power supplyDroneMedicalCar chargerController3D printerDigital productsSmall appliancesConsumer electronics
What are the main technical parameters of the WSK200N08 MOSFET?
The WSK200N08 is an N-channel MOSFET featuring a drain-source breakdown voltage (VDS) of 80V, continuous drain current (ID) of 200A, and a low drain-source on-resistance (RDS(on)) of 2.9mΩ (typical 3.5mΩ at 10V). It has an input capacitance (Ciss) of 8154 pF.
What package is the WSK200N08 MOSFET available in?
The device is housed in a standard TO-263-2L package, which offers optimal thermal dissipation and high electrical reliability for power conversion tasks.
In which applications can the WSK200N08 be utilized?
It is highly suitable for electronic cigarettes, wireless chargers, electric motor drivers, emergency power supplies, drones, medical equipment, car chargers, system controllers, 3D printers, digital products, small household appliances, and general consumer electronics.
What equivalents exist for the WSK200N08?
Compatible cross-reference alternatives include the AOS AOB1608L/AOB260L/AOB266L/AOB270AL/AOB280L/AOB66613L/AOB66616L/AOB66811L, ST STH130N8F7-2/STH140N8F7-2/STH145N8F7-2AG, PANJIT PSMB032N08NS1, and POTENS PDH8970.
What are the gate-source voltage limits of the WSK200N08?
The gate-source voltage (VGS) limit of the WSK200N08 MOSFET is ±25V, ensuring robust switching operation even under varying load conditions.
Olukey
