The WST2026 is an N-Channel MOSFET featuring a high voltage capacity of 85V, a continuous drain current of 210A, and a low drain-source on-state resistance of 4mΩ. It is designed in a robust TO-247-3L package for optimal thermal and electrical performance.
Part number
Configuration
Type
VDS (V)
VGS ±(V)
ID (A)
RDS(ON) (mΩ)
RDS(ON) (mΩ)
Ciss (pF)
Package
@10V
@6V
@4.5V
@2.5V
@1.8V
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Typ.
Max.
Value
WSL220N08
Single
N-Ch
85
20
210
4
4.9
-
-
-
-
-
-
-
-
7600
TO-247-3L
Equivalent Replacement Cross-References:
AOS AOK66914
ON/FAIRCHILD FDH210N08
POTENS PDX8970
Frequently Asked Questions
What are the core technical specifications of WST2026?
The WST2026 MOSFET features a voltage rating of 85V, a continuous current rating of 210A, a low channel resistance of 4mΩ, N-Channel polarity, and is housed in a TO-247-3L package.
What equivalent replacement parts are compatible with WST2026?
Compatible equivalent options include the AOS AOK66914, ON/Fairchild FDH210N08, and POTENS PDX8970 MOSFETs.
What is the typical input capacitance (Ciss) for the WSL220N08?
The WSL220N08 has a typical input capacitance (Ciss) of 7600 pF, which is critical for determining gate drive performance.
What are the RDS(ON) specifications for the WSL220N08?
Tested at a gate voltage (VGS) of 10V, the WSL220N08 MOSFET exhibits a maximum RDS(ON) resistance of 4mΩ, and a typical values around 4.9mΩ.
Which packaging standard does the WSL220N08 utilize?
It uses the standard industry TO-247-3L package, which is ideal for high-power semiconductor applications requiring efficient heat dissipation.