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| Part Number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss (pF) |
Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | ||||||||
| WSR130N06 | Single | N-Ch | 60 | 20 | 130 | 3 | 3.5 | - | - | 3.5 | 4.5 | - | - | - | - | 5377 | TO-220-3L |
The WSR130N06 is an N-channel MOSFET featuring a drain-to-source voltage (VDS) of 60V, a continuous drain current (ID) of 130A, and a low typical drain-source on-resistance (RDS(ON)) of 3mΩ at 10V.
This MOSFET comes in a standard TO-220-3L package, which provides excellent thermal dissipation performance suitable for high-current applications.
It is highly suitable for motor control, Battery Management Systems (BMS), wireless chargers, E-cigarettes, emergency power supplies, drones, medical equipment, car chargers, controllers, 3D printers, small home appliances, and various consumer electronics.
The typical input capacitance (Ciss) of the WSR130N06 MOSFET is 5377 pF.
Equivalent cross-reference models include AOS AOT2610L and AOTF2606L, ST STP100N6F7 and STP80N6F6, Nxperian PSMN4R2-60PL, IR IRFB3206PBF, and POTENS PDP6902.
