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| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSR28N65F | Single | N-Ch | 650 | 30 | 28 | 280 | 340 | - | - | - | - | - | - | - | - | 781 | TO-220F-3L |
The WSR28N65F is an N-channel MOSFET featuring a drain-source voltage (VDS) of 650V, continuous drain current (ID) of 28A, and a static drain-source on-resistance (RDS(ON)) of 280mΩ. It is housed in a TO-220F-3L package.
This MOSFET is highly versatile and suitable for use in massage chairs, medical power supplies, 5G communication systems, drones, motors and motor control units, and automotive electronics.
It is packaged in a TO-220F-3L casing. The "F" denotes a fully isolated package, which helps in preventing electrical shorts to the heatsink without requiring extra insulation washers, thereby simplifying assembly.
The WSR28N65F supports a gate-source voltage (VGS) range of ±30V, which offers broad compatibility with standard gate driver circuits.
The input capacitance (Ciss) is 781 pF, measured under standard test conditions, enabling fast switching speeds and high system efficiency.
