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The voltage of WSC5N20 WSC5N20A WSC5N20G MOSFET is 200V, the current is 5A, the resistance is 80mΩ, the channel is N-channel, and the package is TO-251-3L.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSC5N20 | Single | N-Ch | 200 | 30 | 5 | 490 | 580 | - | - | - | - | - | - | - | - | 255 | TO-251-3L |
| WSC5N20A | Single | N-Ch | 200 | 20 | 5 | 520 | 600 | - | - | - | - | - | - | - | - | 300 | TO-251-3L |
| WSC5N20G | Single | N-Ch | 200 | 20 | 5 | 530 | 600 | - | - | - | - | - | - | - | - | 280 | TO-251-3L |
A1: The WSC5N20, WSC5N20A, and WSC5N20G MOSFETs feature a drain-source voltage (VDS) of 200V, a continuous drain current (ID) of 5A, and are designed for N-channel configurations.
A2: All three models (WSC5N20, WSC5N20A, and WSC5N20G) are supplied in the compact and highly thermal-efficient TO-251-3L package.
A3: WSC5N20 supports a gate-source voltage (VGS) limit of ±30V, whereas WSC5N20A and WSC5N20G support a gate-source voltage (VGS) limit of ±20V.
A4: These MOSFETs are widely applied in electronic cigarettes, wireless chargers, motors, emergency power systems, drones, medical equipment, car chargers, controllers, digital products, small household appliances, and other consumer electronics.
A5: Equivalent cross-reference models include AOS AOI8N25, VISHAY SiHFU220, and dintek DTL10N20.
A6: The typical input capacitance (Ciss) values are 255pF for WSC5N20, 300pF for WSC5N20A, and 280pF for WSC5N20G.
