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| Part number | Configuration | Type | Ratings | RDS(ON)(mΩ) | Ciss | Package | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| VDS | VGS | ID | @10V | @6V | @4.5V | @2.5V | @1.8V | ||||||||||
| (V) | ±(V) | (A) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | ||||
| WSD20L120ADN56 | Single | P-Ch | -20 | 10 | -88 | - | - | - | - | 4 | 5 | 5.5 | 7.5 | - | - | 3350 | DFN5X6-8L |
The WSD20L120ADN56 is a P-Channel MOSFET with a rated voltage (VDS) of -20V, a continuous drain current (ID) of -88A, and an on-resistance (RDS(ON)) of 4mΩ.
This device is packaged in a compact, surface-mount DFN5X6-8L outline, which offers excellent thermal performance and high board-level reliability.
It is designed for use in e-cigarettes, wireless chargers, motor drive systems, drones, medical equipment, car chargers, system controllers, digital products, small household appliances, and consumer electronics.
At a gate-source voltage (VGS) of 4.5V, the typical RDS(ON) is 5mΩ (4mΩ Max). When operating at a lower VGS of 2.5V, the typical RDS(ON) is 7.5mΩ (5.5mΩ Max).
The input capacitance (Ciss) for this P-Channel MOSFET is rated at 3350 pF, enabling efficient switching performance in high-frequency applications.
Yes, the POTENS PDC2601X is referenced as a comparable part model for similar functional parameters.
