The WSD30100DN56 is a high-performance N-Channel enhancement mode MOSFET.
Engineered for high efficiency and robust power management, it features a voltage rating of 30V,
a continuous drain current capability of 100A, and an ultra-low on-state resistance of 3.3mΩ.
It is packaged in a compact DFN5X6-8L format, making it ideal for high-density power system designs.
Q1: What are the primary specifications of the WSD30100DN56 MOSFET?
The WSD30100DN56 is an N-Channel MOSFET featuring a drain-source voltage (VDS) of 30V, a continuous drain current (ID) of 100A, and an on-state resistance (RDS(ON)) of 3.3mΩ at 10V.
Q2: What package type does the WSD30100DN56 use?
It is housed in a compact, highly thermal-efficient DFN5X6-8L package, which is designed for surface-mount applications with high power density.
Q3: In which applications is the WSD30100DN56 MOSFET typically used?
This MOSFET is widely used in power management systems such as e-cigarettes, wireless chargers, drones, medical equipment, car chargers, power controllers, digital electronics, small appliances, and consumer electronics.
Q4: Are there equivalent models from other brands to replace WSD30100DN56?
Yes, cross-reference alternatives include AOS (AON6354, AON6572), ON Semi (NTMFS4946N), Vishay (SiRA60DP, SiDR390DP), STMicroelectronics (STL65DN3LLH5), and Infineon (BSC014N03LSG), among others.
Q5: What is the gate-source voltage limit and typical Ciss for WSD30100DN56?
The WSD30100DN56 has a gate-source voltage (VGS) rating of ±20V and a typical input capacitance (Ciss) of 1350 pF, offering efficient switching speeds.
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