WSD30160DN56 N-Channel MOSFET
The WSD30160DN56 MOSFET operates at a voltage of 30V with a current capacity of 120A and a low resistance of 1.9mΩ. Designed as an N-channel MOSFET, it is housed in a high-thermal-efficiency DFN5X6-8 package.
Voltage30V
Current120A
Resistance1.9mΩ
PackageDFN5X6-8
Target Applications
E-cigarettes
Wireless Charging
Drones
Medical Care
Car Chargers
Controllers
Digital Products
Small Household Appliances
Consumer Electronics
What are the core electrical ratings of the WSD30160DN56 MOSFET?
The WSD30160DN56 is an N-channel MOSFET designed for a maximum Drain-Source voltage (VDS) of 30V, a continuous current (ID) of 120A at 25℃, and exhibits a highly efficient typical on-resistance (RDS(ON)) of 1.9mΩ at a gate drive of 10V.
In what applications is the WSD30160DN56 typically used?
Thanks to its high current threshold and low internal resistance, it is widely integrated into e-cigarettes, wireless charging stations, drones, medical equipment, car chargers, smart controllers, small household appliances, and various digital consumer electronics.
What package type does the WSD30160DN56 use?
This MOSFET uses a DFN5X6-8 surface-mount package. The compact, flat-lead design offers excellent thermal dissipation and layout performance in high-density electronic circuits.
Are there suitable cross-reference replacement models from other manufacturers?
Yes, functional equivalents include AOS (AON6382, AON6384, AON644A, AON6548), Onsemi/Fairchild (NTMFS4834N, NTMFS4C5N), Toshiba (TPH2R93PL), Panjit (PJQ5426), Niko-Sem (PKE1BB), and Potens (PDC392X).
What is the gate threshold voltage (VGS(th)) range for this device?
The gate threshold voltage ranges from a minimum of 1.2V up to a maximum of 2.5V, with a typical value of 1.7V, making it highly compatible with standard logic-level drive signals.
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