Latest design WSD3030DN33 N-channel 30V 34A DFN3X3-8L WINSOK MOSFET Manufacturer, In Stock

Part Number:WSD3030DN33 BVDSS:30V ID:34A RDSON:15mΩ   Channel:N-channel Package:DFN3X3-8L

Product Description

Product Specifications
Part Number
WSD3030DN33
Voltage (VDS)
30V
Current (ID)
34A
Resistance (RDS(ON))
15mΩ
Channel Type
N-channel
Package
DFN3X3-8L
Applications
Electronic cigarettes
Wireless chargers
Controllers
Digital products
Small appliances
Consumer electronics
Detailed Parameters

Part number

Configuration

Type

VDS

VGS

ID (A)

RDS(ON)(mΩ)

RDS(ON)(mΩ)

Ciss

Package

@10V

@6V

@4.5V

@2.5V

@1.8V

(V)

±(V)

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

Typ.

Max.

(pF)

WSD3030DN33

Single

N-Ch

30

20

34

15

18

-

-

23

28

-

-

-

-

760

DFN3X3-8L

Cross References & Equivalent Parts
AOS AON7430, 7522E, AON7566, AONR36368, AONR36366
ON / FAIRCHILD NTTFS4929N
VISHAY SiS402DN, SiSH114ADN, SiS444DN, SiSH402DN, Si7114ADN
INFINEON / IR BSZ130N03MSG, BSZ130N03LSG, BSZ0909NS
TPN / PANJIT TPN11003NL, TPN8R903NLPANJIT PJQ4408P
NIKO PE632BA, PE534SA, P0503BEA
Frequently Asked Questions
What are the main technical parameters of WSD3030DN33?
The WSD3030DN33 is an N-channel MOSFET with a voltage rating of 30V, continuous current of 34A, typical resistance of 15mΩ, and is housed in a DFN3X3-8L package.
What applications are compatible with WSD3030DN33 MOSFET?
It is widely used in electronic cigarettes, wireless chargers, controllers, digital products, small household appliances, and various consumer electronics.
What is the gate-source voltage (VGS) and input capacitance (Ciss) of WSD3030DN33?
Based on the specifications, the gate-source voltage (VGS) is ±20V, and the input capacitance (Ciss) is 760 pF.
What are the equivalent MOSFET models from AOS and Vishay for WSD3030DN33?
Equivalent models from AOS include AON7430, 7522E, AON7566, AONR36368, and AONR36366. For Vishay, equivalents include SiS402DN, SiSH114ADN, SiS444DN, SiSH402DN, and Si7114ADN.
Does WSD3030DN33 support low resistance operation at lower gate voltages?
Yes, it features a maximum RDS(ON) of 18mΩ (typical 15mΩ) at @10V, and a maximum of 28mΩ (typical 23mΩ) at @4.5V, offering high efficiency under different gate voltage configurations.

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