WSD40120DN56G N-Channel MOSFET
High-performance power semiconductor designed for high efficiency switching applications.
⚡ E-cigarettes MOSFET
⚡ Wireless charging MOSFET
⚡ Drones MOSFET
⚡ Medical care MOSFET
⚡ Car chargers MOSFET
⚡ Controllers MOSFET
⚡ Digital products MOSFET
⚡ Small household appliances MOSFET
⚡ Consumer electronics MOSFET
Frequently Asked Questions
What are the primary specifications of the WSD40120DN56G MOSFET?
The WSD40120DN56G is an N-channel MOSFET featuring a drain-source voltage (VDS) of 40V, continuous drain current (ID) of 120A, and a static drain-source on-resistance (RDS(ON)) of 1.4mΩ, packaged in a compact DFN5X6-8 package.
Which devices and applications are compatible with this MOSFET?
It is highly suitable for electronic cigarettes, wireless charging systems, drone power boards, medical devices, car chargers, controllers, digital products, small household appliances, and other consumer electronics.
What is the thermal operating range of the WSD40120DN56G?
This MOSFET has a rated operating junction temperature (TJ) and storage temperature range of -55 to 150℃, ensuring reliable performance in both low and high-temperature environments.
Are there cross-reference equivalents available for this MOSFET?
Yes, equivalent options that share compatible configurations include AOS models (AON6234, AON6232, AON623), STMicroelectronics (STL14N4F7AG), and POTENS Semiconductor (PDC496X).
What is the typical gate threshold voltage for the WSD40120DN56G?
The gate threshold voltage (VGS(th)) typically operates at 1.6V, with a minimum threshold limit of 1.2V and a maximum limit of 2.2V under a 250uA drain current condition.
What is the total power dissipation capability?
The WSD40120DN56G MOSFET supports a total maximum power dissipation (PD) of 125W when operating at a case temperature (TC) of 25℃.
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