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The WSD4076DN56 is a high-performance N-channel MOSFET designed for efficient power management and switching applications. Featuring a package configuration of DFN5X6-8, it delivers reliable operation under various thermal conditions.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V | 76 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V | 33 | A |
| IDM | Pulsed Drain Currenta | 125 | A |
| EAS | Single Pulse Avalanche Energyb | 31 | mJ |
| IAS | Avalanche Current | 31 | A |
| PD@Ta=25℃ | Total Power Dissipation | 1.7 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperature Coefficient | Reference to 25℃ , ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=10V , ID=12A | --- | 6.9 | 8.5 | mΩ |
| RDS(ON) | Static Drain-Source On-Resistance2 | VGS=4.5V , ID=10A | --- | 10 | 15 | mΩ |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.5 | 1.6 | 2.5 | V |
| △VGS(th) | VGS(th) Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25℃ | --- | --- | 2 | uA |
| VDS=32V , VGS=0V , TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=20A | --- | 18 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.7 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V , VGS=4.5V , ID=12A | --- | 5.8 | --- | nC |
| Qgs | Gate-Source Charge | --- | 3.0 | --- | ||
| Qgd | Gate-Drain Charge | --- | 1.2 | --- | ||
| Td(on) | Turn-On Delay Time | VDD=15V , VGEN=10V , RG=3.3Ω, ID=1A . | --- | 12 | --- | ns |
| Tr | Rise Time | --- | 5.6 | --- | ||
| Td(off) | Turn-Off Delay Time | --- | 20 | --- | ||
| Tf | Fall Time | --- | 11 | --- | ||
| Ciss | Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 680 | --- | pF |
| Coss | Output Capacitance | --- | 185 | --- | ||
| Crss | Reverse Transfer Capacitance | --- | 38 | --- |
The WSD4076DN56 is an N-channel MOSFET featuring a 40V drain-source voltage (VDS), 76A continuous drain current (ID) capability, and a low static drain-source on-resistance (RDS(ON)) of 6.9mΩ. It is housed in a DFN5X6-8 package.
This component is optimized for power management and switching circuits in small appliances, handheld electronics, and motor drive controllers.
Compatible cross-reference alternatives include STMicroelectronics' STL52DN4LF7AG, STL64DN4F7AG, and STL64N4F7AG; PANJIT's PJQ5442; and POTENS Semiconductor's PDC496X.
The device is rated to operate securely within a junction temperature (TJ) and storage temperature (TSTG) range of -55℃ to 150℃.
Under standard conditions where the ambient temperature (Ta) is 25℃, the WSD4076DN56 features a total power dissipation rating of 1.7 Watts.
