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The voltage of WSD45P10DN56 and WSD40P10DN56 MOSFET is -100V, with a current capacity of -30A and a resistance of 78mΩ. These P-Channel components are designed in the DFN5X6-8L package.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSD45P10DN56 | Single | P-Ch | -100 | 20 | -27.5 | 62 | 81 | - | - | 70 | 91 | - | - | - | - | 2590 | DFN5X6-8L |
| WSD40P10DN56 | Single | P-Ch | -100 | 20 | -30 | 78 | 95 | - | - | - | - | - | - | - | - | 3029 | DFN5X6-8L |
Both are P-Channel MOSFETs featuring a voltage rating of -100V, design current capacity up to -30A, and a channel resistance of 78mΩ. They are packaged in a DFN5X6-8L form factor.
These devices are highly optimized for applications including small appliances, electric motors, Power Delivery (PD) controllers, and drones.
Yes, VISHAY Si7489DP is a comparable equivalent device that shares similar electrical characteristics.
The maximum rated gate-source voltage (VGS) for both WSD45P10DN56 and WSD40P10DN56 is ±20V.
At a gate voltage of 10V, the typical RDS(ON) for the WSD45P10DN56 is 62mΩ (81mΩ Max), while the WSD40P10DN56 features a typical RDS(ON) of 78mΩ (95mΩ Max).
The WSD45P10DN56 has a typical input capacitance (Ciss) of 2590 pF, whereas the WSD40P10DN56 features an input capacitance of 3029 pF.
