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Voltage (VDS)
150V
Current (ID)
10A
Resistance (RDS(ON))
225mΩ
Channel Type
N-channel
Package
TO-252-2L
| Part Number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSF12N15 | Single | N-Ch | 150 | 20 | 10 | 225 | 290 | - | - | 260 | 350 | - | - | - | - | 755 | TO-252-2L |
Q1: What are the main specifications of the WSF12N15 MOSFET?
The WSF12N15 is an N-channel MOSFET featuring a drain-source voltage (VDS) of 150V, a continuous drain current (ID) of 10A, and a static drain-source on-resistance (RDS(ON)) of 225mΩ (typical at 10V).
Q2: What package type does the WSF12N15 use?
It is housed in a TO-252-2L package, which offers excellent thermal performance and is standard for surface-mount designs.
Q3: In what systems can the WSF12N15 MOSFET be integrated?
This device is suitable for LED controllers, automotive electronics, lighting lamps, medical equipment, and industrial control devices.
Q4: What is the typical input capacitance (Ciss) of the WSF12N15?
The typical input capacitance (Ciss) of the WSF12N15 MOSFET is 755 pF, allowing for optimal efficiency in high-frequency switching applications.
Q5: What are the typical and maximum RDS(ON) resistance values at different gate voltages?
At a gate-source voltage (VGS) of 10V, the typical RDS(ON) is 225mΩ and the maximum is 290mΩ. At 4.5V, the typical RDS(ON) is 260mΩ and the maximum is 350mΩ.
