The WSF3038 and WSF3040 N-channel MOSFETs are high-performance power devices engineered with a 30V rating, delivering up to 38A of current handling capability and optimized with an ultra-low resistance of 10mΩ. Housed in a durable TO-252-2L package, these MOSFETs are built to provide reliable efficiency in compact circuits.
What are the primary specifications of WSF3038 and WSF3040 MOSFETs?
Both components are N-channel MOSFETs designed with a drain-source voltage (Vds) of 30V. The WSF3038 model handles a current of 38A, while the WSF3040 supports up to 43A.
What is the package configuration for these devices?
Both the WSF3038 and WSF3040 MOSFETs are packaged in the industry-standard TO-252-2L format, which is optimized for efficient heat dissipation and surface-mount PCB designs.
What are the main application areas for these MOSFETs?
These components are widely utilized in e-cigarettes, wireless charging units, motor drivers, drone systems, medical hardware, automobile chargers, system controllers, digital consumer products, and household appliances.
What is the internal resistance (RDS(ON)) of the WSF3040?
The WSF3040 MOSFET exhibits an ultra-low internal resistance of 10mΩ typical (12mΩ max) when operating at @10V, ensuring low power loss and high efficiency.
Which equivalent models can cross-reference with these MOSFETs?
Common equivalents include the AOS AOD418, Infineon STD40NF03L, IR IPD105N03LG, Toshiba TK40P03M1, Panjit PJD45N03, and Fairchild FDD6296, among others listed in the cross-reference section.
What is the Gate-Source Voltage (VGS) limit for these N-Channel MOSFETs?
Both the WSF3038 and WSF3040 have a rated Gate-Source Voltage (VGS) of ±20V.