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| Part Number | Configuration | Type | VDS (V) | VGS ±(V) | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss (pF) | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | |||||
| WSF35N10 | Single | N-Ch | 100 | 20 | 35 | 36 | 48 | - | - | 39 | 55 | - | - | - | - | 1964 | TO-252-2L |
| WSF50N10G | Single | N-Ch | 100 | 20 | 40 | 13.8 | 20 | - | - | 17.4 | 26 | - | - | - | - | 1003.9 | TO-252-2L |
Both the WSF35N10 and WSF50N10G MOSFETs feature a drain-to-source voltage (VDS) of 100V.
The typical RDS(on) resistance for the WSF50N10G is 13.8mΩ at @10V, while the WSF35N10 has an RDS(on) typical value of 36mΩ at @10V.
These N-channel MOSFET devices are housed in the industry-standard TO-252-2L package.
They are widely applied in automotive electronics, POE (Power over Ethernet), LED lights, audio systems, digital products, small household appliances, consumer electronics, and protection boards.
Yes, equivalent replacements include AOS AOD2910E/AOD4126, ST STD65N3LLH5/STD25N10F7/STD35NF06, Infineon/IR IPD180N10N3G/IPD25CN10NG, Panjit PJD50N10AL, Potens PDD0966, and Ncepower NCE0140KA.
