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The WSF90N10 is a high-performance N-channel MOSFET designed for robust power management. Featuring a 100V breakdown voltage, a continuous drain current rating of 90A, and a low on-resistance of 60mΩ, this device is packaged in a standard TO-252-2L format to ensure efficient thermal dissipation and high reliability.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | (pF) | |||||
| WSF90N10 | Single | N-Ch | 100 | 20 | 90 | 6 | 9 | - | - | 10 | 15 | - | - | - | - | 2400 | TO-252-2L |
Q1: What is the rated voltage and current capacity of the WSF90N10 MOSFET?
A1: The WSF90N10 operates with a maximum drain-source voltage (VDS) of 100V and a continuous drain current (ID) of 90A.
Q2: Which package configuration does the WSF90N10 use?
A2: The WSF90N10 is available in the industry-standard TO-252-2L package, which is designed for efficient surface mount applications.
Q3: What are the primary applications for the WSF90N10 MOSFET?
A3: It is widely utilized in automotive electronics, POE (Power over Ethernet), LED lighting systems, audio equipment, digital devices, small home appliances, consumer electronics, and battery protection boards.
Q4: What is the typical on-resistance (RDS(ON)) of the WSF90N10 MOSFET?
A4: The general specification sheet indicates a nominal resistance of 60mΩ. Under specific testing conditions at a gate-source voltage (VGS) of 10V, it features a typical resistance of 9mΩ and a maximum of 6mΩ.
Q5: What is the input capacitance (Ciss) of the WSF90N10?
A5: The typical input capacitance (Ciss) of the WSF90N10 MOSFET is 2400 pF.
Q6: What is a compatible cross-reference model for the WSF90N10?
A6: The PDD0978 model can be used as a cross-reference part replacement for the WSF90N10.
