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The WSR50N06 is the highest performance trench N-Ch MOSFET with extreme high cell density, which provides excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSR50N06 meets the RoHS and Green Product requirements, with 100% EAS guaranteed and full function reliability approved.
These N-Channel enhancement mode power field-effect transistors are produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high-efficiency switching for power management in portable and battery-operated products.
| Symbol | Parameter | Rating | Units |
|---|---|---|---|
| VDS | Drain-Source Voltage | 60 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS @ 10V1 | 50 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS @ 10V1 | 32 | A |
| ID@TA=25℃ | Continuous Drain Current, VGS @ 10V1 | 10 | A |
| ID@TA=70℃ | Continuous Drain Current, VGS @ 10V1 | 8 | A |
| IDM | Pulsed Drain Current2 | 180 | A |
| EAS | Single Pulse Avalanche Energy3 | 35 | mJ |
| IAS | Avalanche Current | 28 | A |
| PD@TC=25℃ | Total Power Dissipation4 | 53 | W |
| PD@TA=25℃ | Total Power Dissipation4 | 3.5 | W |
| TSTG | Storage Temperature Range | -55 to 150 | ℃ |
| TJ | Operating Junction Temperature Range | -55 to 150 | ℃ |
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WSR50N06 | Single | N-Ch | 60 | 20 | 50 | 16 | 20 | - | - | 22 | 26 | - | - | - | - | 2458 | TO-220-3L |
