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The WSR80N08 is a high-performance N-channel MOSFET designed for efficient power management and switching applications, featuring a voltage rating of 80V and a continuous drain current capability of 80A.
| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON) (mΩ) | RDS(ON) (mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| (V) | ±(V) | Max. | @10V | @6V | @4.5V | @2.5V | @1.8V | (pF) | |||||||||
| Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | ||||||||
| WSR80N08 | Single | N-Ch | 80 | 20 | 80 | 8.4 | 9.5 | - | - | - | - | - | - | - | - | 4800 | TO-220-3L |
The WSR80N08 is an N-channel single MOSFET featuring a drain-source voltage (VDS) of 80V, continuous drain current (ID) of 80A, and a low typical static drain-source on-resistance (RDS(ON)) of 8.4mΩ at 10V.
It is packaged in a standard TO-220-3L housing. This through-hole package offers excellent thermal dissipation characteristics, making it ideal for high-power applications that require heatsinks.
Due to its high current and voltage handling, it is widely used in motor controllers, Battery Management Systems (BMS), wireless chargers, emergency power supplies, drones, 3D printers, car chargers, and various consumer electronics.
Yes, equivalent or cross-referenced parts include AOS (AOT286L, AOT430), ON/Fairchild (HUF7554P3, HUF75545P3), Nexperia (PSMN8R7-80PS), Infineon/IR (IPP057N08N3 G, IPP070N08N3 G), NXP (PHP79NQ08LT), and Toshiba (TK40A06N1, TK40E06N1).
The WSR80N08 has a typical input capacitance (Ciss) of 4800 pF, which helps designers optimize gate drive circuitry and switching speeds.
