Latest design WST3032 WST3052 N-channel 30V 0.2A SOT-323-3L WINSOK MOSFET Factory, Products

Part Number:WST3032 WST3052 BVDSS:30V ID:0.2A RDSON:50mΩ Channel:N-channel Package:SOT-323-3L

Product Description

The voltage of WST3032 WST3052 MOSFET is 30V, the current is 0.2A, the resistance is 50mΩ, the channel is N-channel, and the package is SOT-323-3L.

Watches Bracelets Miniature Portable Digital Protective Plates

Voltage VDS

30V

Resistance RDS(on)

50mΩ

Channel Type

N-Channel

Package

SOT-323-3L

Technical Specifications

Part Number Configuration Type VDS VGS ID (A) RDS(ON)(mΩ) RDS(ON)(mΩ) Ciss Package
@10V @6V @4.5V @2.5V @1.8V
(V) ±(V) Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. (pF)
WST3032 Single N-Ch 30 20 0.2 - 5000 - - - 5500 - - - - 42 SOT-323-3L
WST3052 Single N-Ch 30 12 2.5 - - - - 50 60 60 70 - - 286 SOT-323-3L

Cross Reference & Equivalents

  • Nexperia NX3008NBKW
  • TOSHIBA SSM3K119TU
  • PANJIT PJC7400
  • NIKO PZP103BY

Frequently Asked Questions

What are the primary applications of the WST3032 and WST3052 MOSFETs?

These components are designed for low-power and compact consumer electronics, such as smartwatches, fitness bracelets, miniature portable digital hardware, and battery protective plates.

What package type do these MOSFETs use?

Both WST3032 and WST3052 utilize the miniature SOT-323-3L surface-mount package, which provides a compact footprint for high-density circuit designs.

What are the major performance differences between WST3032 and WST3052?

The WST3032 is optimized for lower current applications (0.2A) with a high gate-source voltage limit of 20V. In contrast, the WST3052 handles higher currents up to 2.5A with a lower maximum gate-source voltage of 12V and significantly lower RDS(ON) resistance.

What equivalent models can replace WST3032 or WST3052?

Compatible cross-reference parts include Nexperia NX3008NBKW, TOSHIBA SSM3K119TU, PANJIT PJC7400, and NIKO PZP103BY.

Why is the N-channel configuration preferred in these application areas?

N-channel MOSFETs typically offer lower on-state resistance (RDS(on)) and faster switching speeds compared to P-channel counterparts in similar package sizes, which improves battery efficiency in wearables.

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