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| Part number | Configuration | Type | VDS | VGS | ID (A) | RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| (V) | ±(V) | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | (pF) | ||||
| WST6004 | Single | N-Ch | 20 | 8 | 0.6 | - | - | - | - | 140 | 450 | 180 | 765 | - | - | 130 | SOT-523-3L |
What are the primary applications for the WST2026 MOSFET?
The WST2026 MOSFET is commonly used in compact electronics including watches, smart bracelets, micro portable digital devices, battery protective plates, and communication modules.
What is the package type of the WST2026 MOSFET?
The WST2026 MOSFET is housed in a SOT-523-3L package, which features a very small footprint ideal for high-density, space-constrained circuit designs.
What are the key technical specifications of the WST2026?
The WST2026 features a drain-source voltage (VDS) of 20V, a drain current (ID) of 0.6A, an N-channel configuration, and a typical on-resistance (RDS(ON)) of 140mΩ.
Are there compatible cross-reference models for this MOSFET?
Yes, cross-references and equivalents include ON/Fairchild FDY300NZ and FDY302NZ, Vishay Si1012CR, NXP PMR290UNE, Toshiba SSM3K72KFS, Panjit PJE8408, Niko PX5D8EA, Potens PDEU2320Y, dintek DTS5012, and ncepower NCE1012E*.
Why is N-channel preferred in portable digital applications?
N-channel MOSFETs typically feature lower on-resistance and better carrier mobility than P-channel alternatives, leading to lower power dissipation and higher efficiency in battery-powered devices.
How does the WST6004 compare in terms of capacitance?
The WST6004 model features an input capacitance (Ciss) of 130pF, which helps ensure fast switching speeds and reduced gate drive losses in low-power circuit designs.
